发明名称 |
Insulating film containing an additive element and semiconductor device |
摘要 |
An insulating film includes an oxide or an oxynitride of a constituent element having a positive valence. The oxide or the oxynitride contains an additive element having a larger valence than the constituent element in a range not less than 3x10-8 at % and less than 1.6x10-3 at %.
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申请公布号 |
US7518199(B2) |
申请公布日期 |
2009.04.14 |
申请号 |
US20050318622 |
申请日期 |
2005.12.28 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIMIZU TATSUO;YAMAGUCHI TAKESHI |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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