发明名称 Structure of high performance combo chip and processing method
摘要 A method for fabricating a chip package is achieved. A seed layer is formed over a silicon wafer. A photoresist layer is formed on the seed layer, an opening in the photoresist layer exposing the seed layer. A first solder bump is formed on the seed layer exposed by the opening. The photoresist layer is removed. The seed layer not under the first solder bump is removed. A second solder bump on a chip is joined to the first solder bump.
申请公布号 US7517778(B2) 申请公布日期 2009.04.14
申请号 US20070901079 申请日期 2007.09.14
申请人 MEGICA CORPORATION 发明人 LEE JIN YUAN;LIN MOU-SHIUNG
分类号 H01L21/20;H01L21/56;H01L23/31;H01L23/538;H01L25/065 主分类号 H01L21/20
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