发明名称 EPITAXIAL SUBSTRATE AND MANUFACTURING METHOD THEREOF AND MANUFACTURING METHOD OF LIGHT EMITTING DIODE APPARATUS
摘要 A manufacturing method of an epitaxial substrate includes the steps of: forming a sacrificial layer, which has a first micro/nano structure, on a substrate; and forming a buffer layer on the sacrificial layer. The sacrificial layer comprises a plurality of micro/nano particles, and the first micro/nano structure is formed after the plurality of micro/nano particles are removed. An epitaxial substrate and a manufacturing method of a light emitting diode (LED) apparatus are also disclosed.
申请公布号 US2009090930(A1) 申请公布日期 2009.04.09
申请号 US20080198331 申请日期 2008.08.26
申请人 CHEN SHIH-PENG;SHIUE CHING-CHUAN;CHEN CHAO-MIN;KUO CHENG-HUANG;CHEN HUANG-KUN 发明人 CHEN SHIH-PENG;SHIUE CHING-CHUAN;CHEN CHAO-MIN;KUO CHENG-HUANG;CHEN HUANG-KUN
分类号 H01L21/20;H01L33/00;H01L33/12 主分类号 H01L21/20
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