发明名称 |
EPITAXIAL SUBSTRATE AND MANUFACTURING METHOD THEREOF AND MANUFACTURING METHOD OF LIGHT EMITTING DIODE APPARATUS |
摘要 |
A manufacturing method of an epitaxial substrate includes the steps of: forming a sacrificial layer, which has a first micro/nano structure, on a substrate; and forming a buffer layer on the sacrificial layer. The sacrificial layer comprises a plurality of micro/nano particles, and the first micro/nano structure is formed after the plurality of micro/nano particles are removed. An epitaxial substrate and a manufacturing method of a light emitting diode (LED) apparatus are also disclosed.
|
申请公布号 |
US2009090930(A1) |
申请公布日期 |
2009.04.09 |
申请号 |
US20080198331 |
申请日期 |
2008.08.26 |
申请人 |
CHEN SHIH-PENG;SHIUE CHING-CHUAN;CHEN CHAO-MIN;KUO CHENG-HUANG;CHEN HUANG-KUN |
发明人 |
CHEN SHIH-PENG;SHIUE CHING-CHUAN;CHEN CHAO-MIN;KUO CHENG-HUANG;CHEN HUANG-KUN |
分类号 |
H01L21/20;H01L33/00;H01L33/12 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|