| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film thermistor and a manufacturing method thereof such that the thermistor can be made compact and its resistance value can be adjusted with high precision without damaging a thermistor thin film itself. SOLUTION: The thin film thermistor comprises a silicon substrate 3 having an SiO<SB>2</SB>layer 2 formed on a surface, the thermistor thin film 4 pattern-formed on a top surface of the SiO<SB>2</SB>layer 2, a pair of thin film upper electrodes 5 pattern-formed on the thermistor thin film 4, an insulating protection film 6 formed on a top surface of the silicon substrate 3 to cover the thermistor thin film 4 and thin film upper electrodes 5, a pair of through holes 8, having conductive films reaching the pair of thin film upper electrodes 5, formed on internal surfaces of through holes bored in the protection film 6, and a pair of upper lead-out electrodes 9 formed on the protection film 6 and having their one-end sides connected to the pair of through holes 8, wherein the resistance value is adjusted by partially removing the pair of upper lead-out electrodes 9. COPYRIGHT: (C)2009,JPO&INPIT
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