摘要 |
<p>This invention provides a vacuum thin film forming apparatus which can always automatically regulate a self-bias on a substrate to a given value and can form a high-quality insulating film with good process reproducibility. The vacuum thin film forming apparatus is characterized in that it comprises a high-frequency sputtering device and at least one vacuum treatment chambers, the high-frequency sputtering device comprises a chamber, evacuation means for evacuating the inside of the chamber, gas introduction means for supplying gas into the chamber, a substrate holder provided within the chamber, and an electrode provided within the substrate holder, the vacuum treatment chamber can be selected from the group consisting of a physical vapor deposition (PVD) chamber, a chemical vapor deposition (CVD) chamber, a physical etching chamber, a chemical etching chamber, a substrate heating chamber, a substrate cooling chamber, an oxidation treatment chamber, a reduction treatment chamber, and an ashing chamber, and the high-frequency sputtering device is electrically connected to the electrode and is provided with a variable impedance mechanism for regulating the potential of the substrate on the substrate holder.</p> |
申请人 |
CANON ANELVA CORPORATION;NAGAMINE, YOSHINORI;NAKAMURA, KANTO;TSUNEKAWA, KOJI |
发明人 |
NAGAMINE, YOSHINORI;NAKAMURA, KANTO;TSUNEKAWA, KOJI |