发明名称 VACUUM THIN FILM FORMING APPARATUS
摘要 <p>This invention provides a vacuum thin film forming apparatus which can always automatically regulate a self-bias on a substrate to a given value and can form a high-quality insulating film with good process reproducibility. The vacuum thin film forming apparatus is characterized in that it comprises a high-frequency sputtering device and at least one vacuum treatment chambers, the high-frequency sputtering device comprises a chamber, evacuation means for evacuating the inside of the chamber, gas introduction means for supplying gas into the chamber, a substrate holder provided within the chamber, and an electrode provided within the substrate holder, the vacuum treatment chamber can be selected from the group consisting of a physical vapor deposition (PVD) chamber, a chemical vapor deposition (CVD) chamber, a physical etching chamber, a chemical etching chamber, a substrate heating chamber, a substrate cooling chamber, an oxidation treatment chamber, a reduction treatment chamber, and an ashing chamber, and the high-frequency sputtering device is electrically connected to the electrode and is provided with a variable impedance mechanism for regulating the potential of the substrate on the substrate holder.</p>
申请公布号 WO2009044474(A1) 申请公布日期 2009.04.09
申请号 WO2007JP69461 申请日期 2007.10.04
申请人 CANON ANELVA CORPORATION;NAGAMINE, YOSHINORI;NAKAMURA, KANTO;TSUNEKAWA, KOJI 发明人 NAGAMINE, YOSHINORI;NAKAMURA, KANTO;TSUNEKAWA, KOJI
分类号 C23C14/34;H01L43/08;H01L43/10;H01L43/12 主分类号 C23C14/34
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