METAL TITANATE THIN FILM PRECURSOR COMPOSITION AND METHOD OF FORMING METAL TITANATE THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a uniform metal titanate thin film precursor composition capable of suppressing the rising of crystallization temperature due to the alternation of a metal titanate thin film precursor and forming the homogenous thin film, and to provide a method of forming the metal titanate thin film using the composition.

SOLUTION: The metal titanate thin film precursor composition consists essentially of a specific titanium compound, a metal element (M) compound except the titanium compound and α-amino acid. The method of forming the metal titanate thin film is carried out by applying the composition on a substrate and heating to form the metal titanate thin film on the substrate.

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