| 摘要 |
A manufacturing method and an apparatus for epitaxial single-crystal substrate is provided to expose a desired region selectively to the outside by using a cover ring. A chamber(110) performs selectively an opening and shutting operation by using a slit gateway. A susceptor(120) is provided inside of the chamber and a passive deposition unit includes high frequency generators(162-164), an induction coil(166), and a gas supply nozzle. A covering(130) is provided on the top of a susceptor, and a center hole(132) is formed at the center of the covering. A first lift portion(140) for lifting a covering is formed on the surrounding of the susceptor, and includes a plurality of first lift pins(142).
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