| 摘要 |
A first DRAM device comprises a first input connected to a first trace line to receive an address signal and a second input is connected to receive an operating voltage, such as Vdd. A second DRAM device comprises a first input connected to the first trace line to receive the address signal and a second input to receive the operating voltage. A first signal termination structure is connected to the first trace line, wherein the first signal termination structure is to terminate the first trace line to the operating voltage.
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