发明名称 SEMICONDUCTOR APPARATUS INCLUDING STORAGE NODES, AND ITS FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor apparatus including storage nodes which are separated each other at a distance which is mutually different from one side portion of bit line patterns, on an active region, and to provide its forming method. SOLUTION: An inactive region 6 which defines the active region 9 is arranged at a semiconductor substrate 3. Gate patterns 34 and the bit line patterns 69 are sequentially formed on the active region 9 and the inactive region 6. The gate patterns 34 and the bit line patterns 69 intersect at right angles each other. The bit line patterns 69 are positioned on the inactive region 6, and electrically connected to the active region 9 through a predetermined region. The storage nodes 103 are formed on the bit line patterns 69, wherein the storage nodes superimpose partially on the active region 9, and are electrically connected with the active region 9. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009076909(A) 申请公布日期 2009.04.09
申请号 JP20080238572 申请日期 2008.09.17
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 CHO MIN-HEE;PARK SEUNG-BAE
分类号 H01L21/8242;H01L27/108 主分类号 H01L21/8242
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