发明名称 |
METHOD OF REMOVING PARTICLES FROM WAFER |
摘要 |
A method of removing particles from a wafer is provided. The method is adopted after a process for removing unreactive metal of a salicide process or after a salicide process and having oxide residue remaining on a wafer or after a chemical vapor deposition (CVD) process that resulted with particles on a wafer. The method includes performing at least two cycles (stages) of intermediate rinse process. Each cycle of the intermediate rinse process includes conducting a procedure of rotating the wafer at a high speed first, and then conducting a procedure of rotating the wafer at a low speed.
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申请公布号 |
US2009090395(A1) |
申请公布日期 |
2009.04.09 |
申请号 |
US20070866746 |
申请日期 |
2007.10.03 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHEN YI-WEI;HUANG BAO-TZENG;LIU AN-CHI;HSIEH CHAO-CHING;HO NIEN-TING;LAI KUO-CHIH |
分类号 |
B08B3/04 |
主分类号 |
B08B3/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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