发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE BY USING ETCH SIMULATION |
摘要 |
<p>A semiconductor device fabricating method using the etching simulation can predict the result of the etching process through the modeling about the etching simulation and reduce the operation error of the process development. An original pattern layout is designed(100). The layout is implemented on the photomask(200). The photoresist pattern is formed into the exposure processing of using photomask on the object layer. The etching process of the object layer is comprised of the simulation model by using the photoresist pattern(405). The recipe for the etching process is obtained through the simulation using the simulation model(407). The recipe is applied and then the object layer is selectively etched(700).</p> |
申请公布号 |
KR20090034537(A) |
申请公布日期 |
2009.04.08 |
申请号 |
KR20070099810 |
申请日期 |
2007.10.04 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
CHO, BYEONG HO;CHANG, DONG SOOK;JEONG, JOO HONG |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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