| 摘要 |
A method for manufacturing semiconductor device has forming a plurality of trenches having at least two kinds of aspect ratios on a semiconductor substrate, filling the plurality of trenches with a coating material containing silicon, forming a mask on the coating material in a part of the trenches among the plurality of trenches filled with the coating material, implanting an ion for accelerating oxidation of the coating material into the coating material in the trenches on which the mask is not formed, forming a first insulating film by oxidizing the coating materials into which the ion is implanted, removing the coating material from the part of the trenches after removing the mask and forming a second insulating film in the part of the trenches from which the coating material is removed.
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