发明名称 DIRECT-MODULATION SEMICONDUCTOR LASER
摘要 PROBLEM TO BE SOLVED: To provide a direct-modulation semiconductor laser capable of obtaining a favorable eye opening. SOLUTION: In the direct-modulation semiconductor laser for outputting a signal light of a transmission rate X1, a p-side electrode and an n-side electrode are formed not to be grounded, an electric NRZ signal of the transmission rate X1 is applied to the p-side electrode, an electric sinusoidal signal of a frequency X2 using a one-bit time width of the transmission rate X1 as one cycle is applied to the n-side electrode, and a minimum point of the electric sinusoidal signal applied to the n-side electrode is set to be situated at the center of the time width of each bit of the electric NRZ signal applied to the p-side electrode. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010278396(A) 申请公布日期 2010.12.09
申请号 JP20090132267 申请日期 2009.06.01
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 ITO TOSHIO;KANAZAWA SHIGERU
分类号 H01S5/062 主分类号 H01S5/062
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