METHOD OF PRODUCING SILICON SINGLE CRYSTAL, APPARATUS FOR PULLING SILICON SINGLE CRYSTAL, AND QUARTZ GLASS CRUCIBLE

摘要

PROBLEM TO BE SOLVED: To provide a method for monitoring leakage of silicon melt, and detecting touch of a seed crystal, and in addition, attaining reinforcement of a quartz glass crucible to be endurable during pulling for a long time, and decrease of impurity concentration of a silicon single crystal. SOLUTION: The method of producing a silicon single crystal includes: steps S13, S14 of detecting a touching status of a seed crystal at a silicon melt by supplying voltage V1 using a crucible side as a negative electrode and a wire side as a positive electrode and by monitoring changes of the voltage, when the seed crystal provided at a front end of the wire touches the silicon melt inside the quartz glass crucible; a step of devitrifying an inner surface of the quartz glass crucible as supplying a voltage V2 using the crucible side as a positive electrode and the wire side as a negative electrode during a temperature control period S15; and steps S16 to S22 of growing the silicon single crystal by slowly pulling the seed crystal as supplying a voltage V3 using the crucible side as a negative electrode and the wire side as a positive electrode after the temperature control period S15. COPYRIGHT: (C)2011,JPO&INPIT