| 摘要 |
PROBLEM TO BE SOLVED: To provide a raw material for chemical vapor deposition which allows a film to be deposited at a low temperature of 300-500°C and which contains an organic silicon-containing compound providing a process having good reactivity. SOLUTION: The raw material for chemical vapor deposition includes an organic silicon-containing compound, represented by formula: HSi(CH<SB>3</SB>)(R<SP>1</SP>)(NR<SP>2</SP>R<SP>3</SP>) (wherein, R<SP>1</SP>represents NR<SP>4</SP>R<SP>5</SP>or a 1C-5C alkyl group; R<SP>2</SP>and R<SP>4</SP>each represent a 1C-5C alkyl group or hydrogen atom; and R<SP>3</SP>and R<SP>5</SP>each represent a 1C-5C alkyl group). COPYRIGHT: (C)2011,JPO&INPIT
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