| 摘要 |
PROBLEM TO BE SOLVED: To achieve an MONOS memory having a structure capable of preventing an influence of ultraviolet rays generated in a manufacturing step. SOLUTION: A semiconductor memory device includes a plurality of bit line diffusion layers 11, a plurality of bit line insulating films 12 formed on the plurality of bit line diffusion layers 11, a plurality of charge trap films 4 formed between adjacent bit line insulating films 12, a plurality of word lines 6 formed across over the plurality of charge trap films 4 and the plurality of bit line insulating films 12, a plurality of contact diffusion layers 13 disposed on extensions of ends of the plurality of bit line diffusion layers 11 and electrically connected to the plurality of bit line diffusion layers 11, and a plurality of bit line contacts 8 formed on the plurality of contact diffusion layers 13. Ends of the plurality of bit insulating films 12 are arranged at positions not beyond side face positions of the word lines 6, closest to the bit line contacts 8, on sides close to the bit line contacts 8 in plan view. COPYRIGHT: (C)2011,JPO&INPIT
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