<p>A photovoltaic device can include a doped contact layer adjacent to a semiconductor absorber layer, where the doped contact layer includes a metal base material and a dopant.</p>
申请公布号
WO2010141463(A1)
申请公布日期
2010.12.09
申请号
WO2010US36894
申请日期
2010.06.01
申请人
FIRST SOLAR, INC.;CHENG, LONG;GUPTA, AKHLESH;ABKEN, ANKE;BULLER, BENYAMIN
