APPARATUS AND METHOD FOR ATOMIC LAYER DEPOSITION

摘要

PURPOSE: An apparatus and a method for atomic layer deposition are provided to effectively increase the density and the corrosion resistance of thin film by forming a layer which can reinforce the treatment of a thin film in the plasma treatment stage. CONSTITUTION: A process chamber(101) offers the space accepting a substrate(10). A susceptor(102) is included in the process inside the chamber. The substrate is horizontally settled according to the columnar direction of the susceptor. A gas injector(103) sprays the deposition gas on the substrate.