发明名称 THE NON VOLATILE MEMORY DEVICE AND METHOD FOR PROGRAMMING AND METHOD FOR READING THEREOF
摘要 PURPOSE: A nonvolatile memory device and a programming/reading-out method thereof are provided to improve the threshold voltage distribution of a cell by reducing a program current after reducing the number of a program cell. CONSTITUTION: A data storage part(110) stores input data. A data counting part(120) outputs a counting signal according to the number of first data. A page buffer part(130) temporarily saves the input data that is saved in the data storage part. The page buffer part comprises a cache latch and a main latch. A control part(140) outputs a control signal by comparing the counting signal and a predetermined number.
申请公布号 KR20100129179(A) 申请公布日期 2010.12.08
申请号 KR20100048109 申请日期 2010.05.24
申请人 HYNIX SEMICONDUCTOR INC. 发明人 AHN, SUNG HOON
分类号 G11C16/34;G11C16/06;G11C16/10 主分类号 G11C16/34
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