发明名称 |
THE NON VOLATILE MEMORY DEVICE AND METHOD FOR PROGRAMMING AND METHOD FOR READING THEREOF |
摘要 |
PURPOSE: A nonvolatile memory device and a programming/reading-out method thereof are provided to improve the threshold voltage distribution of a cell by reducing a program current after reducing the number of a program cell. CONSTITUTION: A data storage part(110) stores input data. A data counting part(120) outputs a counting signal according to the number of first data. A page buffer part(130) temporarily saves the input data that is saved in the data storage part. The page buffer part comprises a cache latch and a main latch. A control part(140) outputs a control signal by comparing the counting signal and a predetermined number.
|
申请公布号 |
KR20100129179(A) |
申请公布日期 |
2010.12.08 |
申请号 |
KR20100048109 |
申请日期 |
2010.05.24 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
AHN, SUNG HOON |
分类号 |
G11C16/34;G11C16/06;G11C16/10 |
主分类号 |
G11C16/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|