PROCESS FOR PRODUCING SEMICONDUCTOR PORCELAIN COMPOSITION/ELECTRODE ASSEMBLY

摘要

The present invention has an object to provide a semiconductive porcelain composition/electrode assembly which is low in room temperature resistivity of 100 ©·cm or less and is reduced in change with the passage of time due to energization with regard to the semiconductive porcelain composition in which a part of Ba of BaTiO 3 is substituted with Bi-Na and which has a P-type semiconductor at a crystal grain boundary. There is provided a process for producing a semiconductive porcelain composition/electrode assembly wherein an electrode is joined to a semiconductive porcelain composition in which a part of Ba of BaTiO 3 is substituted with Bi-Na and which has a P-type semiconductor at a crystal grain boundary, the process including joining the electrode to the semiconductive porcelain composition, followed by conducting a heat treatment at a temperature of from 100°C to 600°C for 0.5 hour to 24 hours.