| 摘要 |
A method for manufacturing a semiconductor device that reduces the overall number of masking processes while also preventing short-circuiting between electrodes. The method can include sequentially forming a first insulating film, a lower metal layer, a second insulating material, an upper metal layer, and a third insulating material over a semiconductor substrate; forming a third insulating film and an upper electrode by performing a first etching process using a mask to pattern the third insulating material and the upper metal layer; and then forming a second insulating film and a lower electrode by performing a second etching process using the mask to pattern the second insulating material and the lower metal layer.
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