| 摘要 |
A method of forming a doped region includes, in one embodiment, implanting a dopant into a region in a semiconductor substrate, recrystallizing the region by performing a first millisecond anneal, wherein the first millisecond anneal has a first temperature and a first dwell time, and activating the region using as second millisecond anneal after recrystallizing the region, wherein the second millisecond anneal has a second temperature and a second dwell time. In one embodiment, the first millisecond anneal and the second millisecond anneal use a laser. In one embodiment, the first temperature is the same as the second temperature and the first dwell time is the same as the second dwell time. In another embodiment, the first temperature is different from the second temperature and the first dwell time is different from the second dwell time.
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