发明名称 |
METHOD OF TREATING SEMICONDUCTOR ELEMENT |
摘要 |
<p>In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm−2eV−1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.</p> |
申请公布号 |
EP2248160(A1) |
申请公布日期 |
2010.11.10 |
申请号 |
EP20090716248 |
申请日期 |
2009.03.02 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
OFUJI, MASATO;ABE, KATSUMI;SHIMIZU, HISAE;HAYASHI, RYO;SANO, MASAFUMI;KUMOMI, HIDEYA;TAKAI, YASUYOSHI;KAWASAKI, TAKEHIKO;KANEKO, NORIO |
分类号 |
H01L29/786;H01L29/66 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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