| 摘要 |
<p>PURPOSE: The flash memory device and manufacturing method thereof is provided so that the charge trap type flash memory device of the structure with an increased program/erase window can be offered. CONSTITUTION: The flash memory device and manufacturing method thereof comprises the substrate(200), insulating layer(210), semiconductor layer(220), selecting transistor and memory cells are included. The insulating layer is formed in the top of the substrate. The semiconductor layer is formed on the insulating layer of the cell region.</p> |
