发明名称 Individual wafer history storage for overlay corrections
摘要 The invention relates to a device manufacturing method comprising identifying a substrate to be processed, performing a manufacturing step of a patterned layer on the substrate, and storing a substrate process history for the substrate. The history may comprise a correction map comprising position errors caused by the manufacturing step. Identifying the substrate may be done by reading an identification sign present on the substrate or by reading an identification code of a lot comprising the substrate and determining a sequence number of the substrate in the lot. Alignment of the substrate with respect to a patterning device of a lithographic apparatus may be corrected using information of the substrate process history. Alternatively or additionally, measured overlay errors may be corrected per substrate using information of the substrate process history.
申请公布号 US7808613(B2) 申请公布日期 2010.10.05
申请号 US20060498268 申请日期 2006.08.03
申请人 ASML NETHERLANDS B.V. 发明人 LOF JOERI
分类号 G03B27/42 主分类号 G03B27/42
代理机构 代理人
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