发明名称 Transistor with spatially integrated schottky diode
摘要 An integrated circuit device for delivering power to a load includes a composite transistor and a composite schottky diode. The composite transistor is formed by a plurality of component transistors that have commonly coupled source terminals, commonly coupled drain terminals and commonly coupled gate terminals. The composite schottky diode is formed by a plurality of component schottky diodes that have anodes coupled in common and coupled to the source terminals of the plurality of component transistors, and for which drain terminals of the commonly coupled drain terminals constitute respective cathodes.
申请公布号 US7808223(B1) 申请公布日期 2010.10.05
申请号 US20070746016 申请日期 2007.05.08
申请人 NETLOGIC MICROSYSTEMS, INC. 发明人 KHANNA SANDEEP;MAGHSOUDNIA MOZAFAR
分类号 G05F1/10;G05F1/34 主分类号 G05F1/10
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