METHOD FOR FABRICATING GAN BASED LIGHT EMITTING DIODE

摘要

PURPOSE: A nitride light emitting device manufacturing method is provided to prevent the generation of crack and contaminant with the separation process by separating each unit light emitting device through selective growth. CONSTITUTION: A substrate is prepared(S101). An element isolation pattern defining each unit emitting device domain is formed on the top of the substrate(S102). A nitride semiconductor layer is formed on the top of the substrate of each unit emitting device domain(S103). The area of the nitride semiconductor layer is selectively controlled by controlling the lateral growth of the nitride semiconductor layer(S104).