SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A semiconductor memory device is provided to effectively regulate the amount of delayed bit-line charge sharing time by varying an output voltage according to the level of an external power voltage. CONSTITUTION: A memory cell(11) outputs data to a part of bit-lines(BL, BLB). A sense-amplifying enable signal(SAEN) is applied to a delay time varying circuit(12). The delay time varying circuit outputs a delayed sense-amplifying enable signal(SAEN_d) by regulating the delayed time of the sense-amplifying enable signal. A bit-line sense amplifier(13) amplifies the voltage difference between the bit-lines and transmits the amplified voltage difference to a part of local input-output lines.