发明名称 Nonvolatile semiconductor memory including memory cell for storing multilevel data having two or more values
摘要 A write controller performs verification for checking whether each memory cell is on a predetermined verification level. For a memory cell to be written to a voltage level higher than the predetermined verification level, the write controller stores, in first and second latch circuits, the number of times of write to be performed by a write voltage after the verification. Whenever write is performed by the write voltage, the write controller updates the number of times of write stored in the first and second latch circuits. After write is performed the number of times of write by the write voltage, the write controller performs write by an intermediate voltage lower than the write voltage.
申请公布号 US7808821(B2) 申请公布日期 2010.10.05
申请号 US20080204207 申请日期 2008.09.04
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 OGAWA MIKIO;ISOBE KATSUAKI;TAKEYAMA YOSHIKAZU;HONMA MITSUAKI;SHIBATA NOBORU
分类号 G11C16/04 主分类号 G11C16/04
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