发明名称 Non-volatile memory device and method of programming the same
摘要 When performing a program operation, a non-volatile memory device comprising a multi-plane performs a cache write operation by employing a page buffer circuit of a plane that does not perform the program operation. A data line mux transfers an externally input first data to a page buffer unit of a plane, which will be programmed, according to a plane select signal, transfers a second data to a page buffer unit of a plane on which a program operation is not performed, while the program of the selected plane is performed, and after the first data is programmed, provides a data transfer path between one page buffer unit and the other page buffer unit according to a data transfer control signal.
申请公布号 US7808825(B2) 申请公布日期 2010.10.05
申请号 US20080163866 申请日期 2008.06.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK WON SUN
分类号 G11C16/04 主分类号 G11C16/04
代理机构 代理人
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