发明名称 Solid-state imaging device, optical sensor and method of operating solid-state imaging device
摘要 A solid-state imaging device and an optical sensor, which can enhance a wide dynamic range while keeping a high sensitivity with a high S/N ratio, and a method of operating a solid-state imaging device for enhancing a wide dynamic range while keeping a high sensitivity with a high S/N ratio are disclosed. An array of integrated pixels has a structure wherein each pixel comprises a photodiode PD for receiving light and generating and accumulating photoelectric charges and a storage capacitor element CS coupled to the photodiode PD through a transfer transistor Tr1 for accumulating the photoelectric charges overflowing from the photodiode PD. The storage capacitor element CS is structured to accumulate the photoelectric charges overflowing from the photodiode PD in a storage-capacitor-element accumulation period TCS that is set to be a period at a predetermined ratio with respect to an accumulation period of the photodiode PD.
申请公布号 US7800673(B2) 申请公布日期 2010.09.21
申请号 US20050592590 申请日期 2005.04.12
申请人 NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY 发明人 SUGAWA SHIGETOSHI;ADACHI SATORU;YAHATA KYOICHI;TERADA TATSUYA
分类号 H04N3/14;H01L27/146;H04N5/335;H04N5/355;H04N5/369;H04N5/374;H04N5/3745 主分类号 H04N3/14
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