SOLID-STATE IMAGING ELEMENT, IMAGING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a solid-state imaging element wherein the efficiency of the injection of photoelectrically-converted charges into a charge accumulation portion can be enhanced.

SOLUTION: A solid-state imaging element 10 having a plurality of pixels 100 including a photoelectric conversion portion 3 formed in a semiconductor substrate has a light shielding film W that is formed above the semiconductor substrate and has an opening above a portion of the photoelectric conversion portion 3. Each of the pixel portions 100 includes a nonvolatile memory transistor MT having a floating gate FG for accumulating the charges generated in the photoelectric conversion portion 3 between the semiconductor substrate and a control gate CG. The floating gate FG and a channel region 6 of the nonvolatile memory transistor MT are covered by the light shielding film W. The photoelectric conversion portion 3 extends below the channel region 6 of the nonvolatile memory transistor MT.

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