| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method capable of suppressing dimensional changes in a resist pattern. <P>SOLUTION: The pattern forming method includes steps of: (1) forming a flattening film by applying a composition for forming a flattening film on a substrate to be processed, where a gap having Dense portion and Flat portion is present; (2) forming a resist film by applying a resist composition on the flattening film; (3) selectively exposing the resist film by irradiating the resist film with radiation; (4) forming a resist pattern by developing the exposed resist film; and (5) forming a predetermined pattern in the flattening film and the substrate by using the resist pattern as a mask. The composition for forming a flattening film contains a predetermined polymer (A), a cross-linking agent (B) and an organic solvent (C). <P>COPYRIGHT: (C)2010,JPO&INPIT |
