发明名称 |
Completely decoupled high voltage and low voltage transistor manufacturing processes |
摘要 |
A semiconductor wafer includes at least a partially manufactured high voltage transistor covered by a high-voltage low voltage decoupling layer and at least a partially manufactured low voltage transistor with the high-voltage low-voltage decoupling layer etched off for further performance of a low-voltage manufacturing process thereon. The high-voltage low-voltage decoupling layer comprising a high temperature oxide (HTO) oxide layer of about 30-150 Angstroms and a low-pressure chemical vapor deposition (LPCVD) nitride layer.
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申请公布号 |
US7824977(B2) |
申请公布日期 |
2010.11.02 |
申请号 |
US20070729408 |
申请日期 |
2007.03.27 |
申请人 |
ALPHA & OMEGA SEMICONDUCTOR, LTD. |
发明人 |
HU YONGZHONG;TAI SUNG-SHAN |
分类号 |
H01L29/00 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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