| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film transistor having high electric field effect mobility and a large ON-current. <P>SOLUTION: The thin film transistor includes: a gate electrode; a gate insulating layer which is provided to cover the gate electrode; a semiconductor layer which is provided over the gate insulating layer to overlap with the gate electrode; an impurity semiconductor layer which is partly provided over the semiconductor layer and which forms a source region and a drain region; and a wiring layer which is provided over the impurity semiconductor layer. In the thin film transistor, a width of the source region and the drain region is narrower than a width of the semiconductor layer, and the width of the semiconductor layer is increased at least in a portion between the source region and the drain region. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
