| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing method, capable of quickly and surely removing a material attached to an end section of a processing subject, such as a wafer and preventing damages due to plasma to each component inside a chamber. SOLUTION: In the plasma processing method, when a plasma processing device 1 that applies a first high frequency power to an upper electrode 5 to generate a plasma and applies a second high-frequency power, having a lower frequency than that of the first high-frequency power to a lower electrode 4 of a wafer W, is used to remove a deposit D attached to an end section of the wafer W, placed on the lower electrode 4 with an oxygen gas plasma; a pressure of the oxygen gas is set to 400 to 800 mTorr; and the oxygen gas is converted into a plasma by the upper electrode 5, in a state in which the wafer W is separated from the lower electrode 4. COPYRIGHT: (C)2011,JPO&INPIT
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