| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element for enhancing emission efficiency while operation voltage is lowered. <P>SOLUTION: The nitride semiconductor light emitting element is constituted by a substrate 100; an n-type nitride semiconductor layer 120 formed on the substrate; an active layer 130 formed on a part of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer 140 formed on the active layer; a p-type contact layer 150, to which p-type impurity is doped by 1×10<SP>20</SP>/cm<SP>3</SP>or more, and which is formed on the p-type nitride semiconductor layer; a transparent oxidation electrode 160 formed on the p-type contact layer; a p-type electrode 170 formed on the transparent oxidation electrode; and n-type electrode 180 formed on the n-type nitride semiconductor layer, where the active layer is not formed. <P>COPYRIGHT: (C)2011,JPO&INPIT |
