| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering apparatus which uses a single sputtering chamber to adequately perform the contact filling of an Al material into an opening part formed in a substrate. SOLUTION: The sputtering apparatus 100 includes: a sputtering chamber 30 housing a target 35B made of Al and a substrate 34B having an aperture formed therein; a plasma gun 40 for forming plasma by the discharge between a cathode unit 41 and an anode A; and magnetic field generating means 24A, 24B deforming plasma emitted from the plasma gun 40 by the effect of the magnetic field. Sheet plasma 27 is guided so as to pass a space between the substrate 34B and the target 35B in the sputtering chamber 30, and when an Al material sputtered from the target 35B by charged particles in the sheet plasma 27 is deposited on the aperture of the substrate 34B, the coverage property of a deposited film made of the Al material is adjusted based on plasma discharge current ID and substrate bias voltage VA. COPYRIGHT: (C)2011,JPO&INPIT |
