| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a chemically amplified positive resist composition suitable for ArF excimer laser lithography and good in properties such as resolution, sensitivity and a pattern form, and also line edge roughness, in particular. <P>SOLUTION: The composition includes a polymer which is soluble or poorly soluble in an aqueous alkali solution but becomes soluble in the solution by action of an acid, a compound which generates the acid by irradiation with active light or radiation, and a compound expressed by formula (I). In formula (I) Z is a 2-14C hydrocarbon group; A is a 3-14C hydrocarbon group; and W is H, 1-12C alkyl, 2-12C alkylalkoxy or a group expressed by formula (II) (wherein X is a bivalent linking group; R is H, 1-6C alkyl or 3-6C cycloalkyl; Y is an atom required for forming a 3-12C alicyclic hydrocarbon group; and l is 0 or 1). <P>COPYRIGHT: (C)2011,JPO&INPIT |
