发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A semiconductor device includes a first interconnect, a porous dielectric layer formed over the first interconnect, a second interconnect buried in the porous dielectric layer and electrically connected to the first interconnect, and a carbon-containing metal film that is disposed between the porous dielectric layer and the second interconnect and isolates these layers.
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申请公布号 |
US2011204519(A1) |
申请公布日期 |
2011.08.25 |
申请号 |
US200913125908 |
申请日期 |
2009.10.22 |
申请人 |
RENESAS ELECTRONICS CORPORATION;ULVAC, INC. |
发明人 |
CHIKAKI SHINICHI;NAKAYAMA TAKAHIRO |
分类号 |
H01L23/532;H01L21/768 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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