发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A semiconductor device includes a first interconnect, a porous dielectric layer formed over the first interconnect, a second interconnect buried in the porous dielectric layer and electrically connected to the first interconnect, and a carbon-containing metal film that is disposed between the porous dielectric layer and the second interconnect and isolates these layers.
申请公布号 US2011204519(A1) 申请公布日期 2011.08.25
申请号 US200913125908 申请日期 2009.10.22
申请人 RENESAS ELECTRONICS CORPORATION;ULVAC, INC. 发明人 CHIKAKI SHINICHI;NAKAYAMA TAKAHIRO
分类号 H01L23/532;H01L21/768 主分类号 H01L23/532
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