| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a power semiconductor device, capable of forming a resurf structure in which an insulating film is embedded in a semiconductor substrate, without causing the variations in insulating film thickness or damage to the substrate, and to provide a power semiconductor device manufactured by the manufacturing method. SOLUTION: The method of manufacturing the power semiconductor device includes the steps of: (a) forming a silicon nitride film 7 on a semiconductor substrate 6; (b) after the step (a), forming a ring-shaped trench 2 along a circumferential edge of the semiconductor substrate 6; (c) forming a first silicon oxide film 10 on the inner surface of the trench 2; (d) after the step (c), embedding the trench 2 by forming a second silicon oxide film 13 on the entire surface of the semiconductor substrate 6; (e) performing flattening processing of the second silicon oxide film 13 using the silicon nitride film 7 as a stopper; and (f) forming a third silicon oxide film 14 in a region from which the silicon nitride film 7 has been removed. COPYRIGHT: (C)2011,JPO&INPIT |
