| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a working speed of a circuit while suppressing an increase of power consumption as much as possible. <P>SOLUTION: A manufacturing method according to the present invention includes: calculating a threshold value from a value of a parameter that characterizes at least a part of a design pattern shape of a transistor on a target path; calculating a difference between the calculated threshold value and a target threshold value; calculating a change amount of a gate length corresponding to the difference between the threshold value and the target threshold value according to a functional relation between the threshold value of the transistor and the gate length; reducing, by the change amount, the gate length of the transistor on the target path; and manufacturing a circuit based on design information on the circuit including the transistor whose gate length is reduced. <P>COPYRIGHT: (C)2012,JPO&INPIT |
