VERTICAL STRUCTURE NON-VOLATILE MEMORY DEVICE

摘要

PURPOSE: A non-volatile memory device of a vertical structure is provided to control the formation of a void by controlling gate length and separation width of transistors and to prevent the switching property degradation of threshold voltage. CONSTITUTION: A channel layer(140) is extended to a direction which is vertical to a substrate(100). A memory cell string comprises a transistor(170). The transistors are perpendicularly arranged to the substrate according to the sidewall of the channel layer. The memory cell string comprises gates(150) which are separated by a first interlayer insulating film. At least one among the transistors comprises a protrusion part which is formed between the gate and the channel layer. The gate has a recessed structure by the protrusion part. A second interlayer insulating film is included between the gate and the channel layer.