发明名称 Semiconductor memory device performing multi-cycle self refresh and method of verifying the same
摘要 PURPOSE: A semiconductor memory device and a verifying method thereof are provided to reduce power consumption of a memory device by easily detecting defects in a multi-cycle self refresh operation. CONSTITUTION: A memory cell array(190) includes first cells and second cells. A tag information register(210) stores refresh cycle information abut each word line connected to the first cells and the second cells. A refresh control circuit(300) generates a refresh enable signal and a refresh address by referring to refresh cycle information stored in the tag information register. A DQ pin connects data stored in the memory cell array to the outside. A refresh address and a refresh enable signal are transmitted to the outside through the DQ pin.
申请公布号 KR20120059097(A) 申请公布日期 2012.06.08
申请号 KR20100120719 申请日期 2010.11.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIM, BO IL;PARK, SANG WON
分类号 G11C11/401;G11C11/402;G11C11/403;G11C11/4063 主分类号 G11C11/401
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