发明名称 |
Semiconductor memory device performing multi-cycle self refresh and method of verifying the same |
摘要 |
PURPOSE: A semiconductor memory device and a verifying method thereof are provided to reduce power consumption of a memory device by easily detecting defects in a multi-cycle self refresh operation. CONSTITUTION: A memory cell array(190) includes first cells and second cells. A tag information register(210) stores refresh cycle information abut each word line connected to the first cells and the second cells. A refresh control circuit(300) generates a refresh enable signal and a refresh address by referring to refresh cycle information stored in the tag information register. A DQ pin connects data stored in the memory cell array to the outside. A refresh address and a refresh enable signal are transmitted to the outside through the DQ pin. |
申请公布号 |
KR20120059097(A) |
申请公布日期 |
2012.06.08 |
申请号 |
KR20100120719 |
申请日期 |
2010.11.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIM, BO IL;PARK, SANG WON |
分类号 |
G11C11/401;G11C11/402;G11C11/403;G11C11/4063 |
主分类号 |
G11C11/401 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|