| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a surface acoustic wave device using an SH wave, in which an electrical resistance loss is reduced and a high electromechanical coupling coefficient k<SP POS="POST">2</SP>can be obtained even when an electrode film thickness is increased. <P>SOLUTION: A surface acoustic wave device 1 using an SH wave comprises: a crystal substrate 2 which has an upper surface and a lower surface and has grooves formed on the upper surface; and an IDT electrode 4 comprising a metal layer 3a filling the grooves, wherein the metal layer 3a is made of a metal having a heavier density than aluminum. <P>COPYRIGHT: (C)2012,JPO&INPIT |
