METHOD FOR FORMING NITRIDE FILM

摘要

PURPOSE: A method for forming a nitride film is provided to the nitride film on a semiconductor wafer in which high density pattern is formed on the top by using a batch-type vertical plasma-assisted ALD(Atomic Layer Deposition) apparatus. CONSTITUTION: A wafer boat(101) revolves by a rotation mechanism(103) at predetermined rotation speed. A heating mechanism(104) is installed on the outer circumference of a quartz chamber(102). The heating mechanism heats the inside of the quartz chamber at predetermined temperature. Ammonia gas is entered into a plasma space(105) along a flow path(F2) and is entered into a processing container. An exhaust port(107) of the quartz chamber is connected with an exhaust pump.