METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to form a semiconductor device with multilayer step profile through a photolithography and an etching process. CONSTITUTION: A stack structure is formed by alternately laminating a plurality of insulating films(20) and conductive films(30) on a substrate(10). The insulating film includes a first insulating film(21), a second insulating film(22), and a third insulating film(23). The conductive film includes a first conductive film(31), a second conductive film(32), and a third conductive film(33). A first photoresist pattern is formed on the stack structure. A second photoresist pattern(43) is formed by thermally processing the first photoresist pattern.