METHOD FOR MANUFACTURING A MOS-FIELD EFFECT TRANSISTOR
摘要
A method for manufacturing a Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) has the step of implanting a base region of said MOSFET within an epitaxial layer of a semiconductor chip comprising an insulated gate structure used as a masking element, wherein the implant beam is angled with respect to a vertical axis of the semiconductor chip such that the base region extends sufficiently under the gate to form a Power-MOSFET.
申请公布号
WO2012068206(A3)
申请公布日期
2012.11.08
申请号
WO2011US60917
申请日期
2011.11.16
申请人
MICROCHIP TECHNOLOGY INCORPORATED;BRAITHWAITE, ROHAN, S.;DIX, GREGORY;KLINE, HAROLD