发明名称 |
Semiconductor device substrate with embedded stress region, and related fabrication methods |
摘要 |
A semiconductor device substrate is presented here. The semiconductor device substrate includes a layer of first semiconductor material having a first lattice constant, a region of second semiconductor material located in the layer of first semiconductor material, and a layer of epitaxially grown third semiconductor material overlying the layer of first semiconductor material and overlying the region of second semiconductor material. The second semiconductor material has a second lattice constant that is different than the first lattice constant. Moreover, the layer of epitaxially grown third semiconductor material exhibits a stressed zone overlying the region of second semiconductor material. The stressed zone has a third lattice constant that is different than the first lattice constant. |
申请公布号 |
US8329551(B2) |
申请公布日期 |
2012.12.11 |
申请号 |
US20100947460 |
申请日期 |
2010.11.16 |
申请人 |
FLACHOWSKY STEFAN;HOENTSCHEL JAN;SCHEIPER THILO;GLOBALFOUNDRIES, INC. |
发明人 |
FLACHOWSKY STEFAN;HOENTSCHEL JAN;SCHEIPER THILO |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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