| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state CMOS image sensor, specifically a pinned photodiode having only two row lines per pixel and for sensing light, a CMOS image sensor pixel having one or more column lines, and its array. <P>SOLUTION: The pixel does not have an address transistor, and a sensing transistor and a reset transistor are both of MOS p-channel type. This architecture results in an extremely low noise operation. In addition, this new pixel architecture allows the standard CDS signal processing operation, which reduces the pixel-to-pixel nonuniformity and minimizes kTC reset noise. The pixel has high sensitivity, high conversion gain, high response uniformity, and low noise, which is enabled by efficient 3T pixel layout. <P>COPYRIGHT: (C)2013,JPO&INPIT |
